Ab initio Electron Mobility and Polar Phonon Scattering in GaAs

28 Nov 2016 Zhou Jin-Jian Bernardi Marco

In polar semiconductors and oxides, the long-range nature of the electron-phonon (\textit{e}-ph) interaction is a bottleneck to compute charge transport from first principles. Here, we develop an efficient ab initio scheme to compute and converge the \textit{e}-ph relaxation times (RTs) and electron mobility in polar materials... (read more)

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  • MATERIALS SCIENCE