Capacitance-Voltage (C-V) Characterization of Graphene-Silicon Heterojunction Photodiodes

25 Feb 2020 Riazimehr Sarah Belete Melkamu Kataria Satender Engström Olof Lemme Max Christian

Heterostructures of two-dimensional (2D) and three-dimensional (3D) materials form efficient devices for utilizing the properties of both classes of materials. Graphene/silicon (G/Si) Schottky diodes have been studied extensively with respect to their optoelectronic properties... (read more)

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  • APPLIED PHYSICS
  • MESOSCALE AND NANOSCALE PHYSICS