Effect of Ge-substitution on Magnetic Properties in the Itinerant Chiral Magnet MnSi

29 Sep 2019 Aji Seno Ishida Hidesato Okuyama Daisuke Nawa Kazuhiro Hong Tao Sato Taku J

We have investigated the effect of Ge-substitution to the magnetic ordering in the B20 itinerant chiral magnet MnSi prepared by melting and annealing under ambient pressure. From metallurgical survey, the solubility limit of Ge was found to be $x=0.144(5)$ with annealing temperature $T_\mathrm{an} = 1073$ K. Magnetization measurements on MnSi$_{1-x}$Ge$_x$ samples show that the helical ordering temperature $T_{\mathrm{c}}$ increases rapidly in the low-$x$ range, whereas it becomes saturated at higher concentration $x>~0.1$... (read more)

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  • MATERIALS SCIENCE
  • STRONGLY CORRELATED ELECTRONS