Effect of lattice distortions on the electron and thermal transport properties of transparent oxide semiconductor Ba1-xSrxSnO3 solid solution films

26 Feb 2020 Cho Hai Jun Sato Koichi Wei Mian Kim Gowoon Ohta Hiromichi

La-doped ASnO3 (A = Ba, Sr) have great potential as advanced transparent oxide semiconductors due to their large optical bandgap and relatively high electron mobility. The bandgap of Ba1-xSrxSnO3 solid solution increases from 3.2 eV (BaSnO3) to 4.6 eV (SrSnO3) with x... (read more)

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