Field-Free Switching of Perpendicular Magnetic Tunnel Junction via Voltage-Gated Spin Hall Effect for Low-Power Spintronic Memory

30 Apr 2018 Peng Shouzhong Li Xiang Kang Wang Zhang He Wang Lezhi Wang Zilu Wang Zhaohao Zhang Youguang Wang Kang L. Zhao Weisheng

Spin Hall effect (SHE) and voltage-controlled magnetic anisotropy (VCMA) are two promising methods for low-power electrical manipulation of magnetization. Recently, magnetic field-free switching of perpendicular magnetization through SHE has been reported with the aid of an exchange bias from an antiferromagnetic IrMn layer... (read more)

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