Investigation of the Electronical and Optical Properties of Quantum Well Lasers with Slightly Doped Tunnel Junction

30 Jan 2018 Li Yajie Wang Pengfei Meng Fangyuan Yu Hongyan Zhou Xuliang Wang Huolei Pan Jiaoqing

We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a nonlinear S-shape I-V characteristic.It was also found that the internal quantum efficiency measured by 21% and 87.3% for the TJ LD and the conventional LD, respectively... (read more)

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