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We experimentally investigate and analyze the electrical and optical characteristics of GaAs-based conventional quantum well laser diodes and the quantum well laser diodes with slightly-doped tunnel junction. It was found that TJ LD show a nonlinear S-shape I-V characteristic.It was also found that the internal quantum efficiency measured by 21% and 87.3% for the TJ LD and the conventional LD, respectively... (read more)
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