Microscopy of hydrogen and hydrogen-vacancy defect structures on graphene devices

24 Oct 2018 Wong Dillon Wang Yang Jin Wuwei Tsai Hsin-Zon Bostwick Aaron Rotenberg Eli Kawakami Roland K. Zettl Alex Mostofi Arash A. Lischner Johannes Crommie Michael F.

We have used scanning tunneling microscopy (STM) to investigate two types of hydrogen defect structures on monolayer graphene supported by hexagonal boron nitride (h-BN) in a gated field-effect transistor configuration. The first H-defect type is created by bombarding graphene with 1-keV ionized hydrogen and is identified as two hydrogen atoms bonded to a graphene vacancy via comparison of experimental data to first-principles calculations... (read more)

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