Nature of carrier doping in T'-La1.8-xEu0.2SrxCuO4 studied by X-Ray Photoemission and Absorption Spectroscopy

14 Jul 2019 · Lin Chun, Horio Masafumi, Kawamata Takayuki, Saito Shin, Koshiishi Keisuke, Sakamoto Shoya, Zhang Yujun, Yamamoto Kohei, Ikeda Keisuke, Hirata Yasuyuki, Takubo Kou, Wadati Hiroki, Yasui Akira, Takagi Yasumasa, Ikenaga Eiji, Adachi Tadashi, Koike Yoji, Fujimori Atsushi ·

Recently, hole-doped superconducting cuprates with the T'-structure La1.8-xEu0.2SrxCuO4 (LESCO) have attracted a lot of attention. We have performed x-ray photoemission and absorption spectroscopy measurements on as-grown and reduced T0-LESCO. Results show that electrons and holes were doped by reduction annealing and Sr substitution, respectively. However, it is shown that the system remains on the electron-doped side of the Mott insulator or that the charge-transfer gap is collapsed in the parent compound.

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Nature of carrier doping in T'-La1.8-xEu0.2SrxCuO4 studied by X-Ray Photoemission and Absorption Spectroscopy

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