Observation of electron excitation into silicon conduction band by slow-ion surface neutralization

18 Oct 2016 Shchemelinin S. Breskin A.

Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed... (read more)

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