Opto-Electronic Characterization of Three Dimensional Topological Insulators

12 Jul 2016 Plank Helene Danilov Sergey N. Bel'kov Vasily V. Shalygin Vadim A. Kampmeier Jörn Lanius Martin Mussler Gregor Grützmacher Detlev Ganichev Sergey D.

We demonstrate that the terahertz/infrared radiation induced photogalvanic effect, which is sensitive to the surface symmetry and scattering details, can be applied to study the high frequency conductivity of the surface states in (Bi1-xSbx)2Te3 based three dimensional (3D) topological insulators (TI). In particular, measuring the polarization dependence of the photogalvanic current and scanning with a micrometre sized beam spot across the sample, provides access to (i) topographical inhomogeneity's in the electronic properties of the surface states and (ii) the local domain orientation... (read more)

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