SOT-MRAM 300mm integration for low power and ultrafast embedded memories

22 Oct 2018 Garello K. Yasin F. Couet S. Souriau L. Swerts J. Rao S. Van Beek S. Kim W. Liu E. Kundu S. Tsvetanova D. Jossart N. Croes K. Grimaldi E. Baumgartner M. Crotti D. Furnémont A. Gambardella P. Kar G. S.

We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x10^10), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ...

PDF Abstract
No code implementations yet. Submit your code now

Categories


  • MESOSCALE AND NANOSCALE PHYSICS
  • EMERGING TECHNOLOGIES
  • APPLIED PHYSICS