Thermoelectric transport properties of silicon: Towards an ab initio approach

25 Oct 2018 Wang Z. Wang S. Obukhov S. Vast N. Sjakste J. Tyuterev V. Mingo N.

We have combined the Boltzmann transport equation with an {\it ab initio} approach to compute the thermoelectric coefficients of semiconductors. Electron-phonon, ionized impurity, and electron-plasmon scattering rates have been taken into account... (read more)

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  • MATERIALS SCIENCE
  • MESOSCALE AND NANOSCALE PHYSICS