Transport in topological insulators with bulk-surface coupling: Interference corrections and conductance fluctuations

28 Dec 2018 Velkov H. Bremm G. N. Micklitz T. Schwiete G.

Motivated by the experimental difficulty to produce topological insulators (TIs) of the Bi$_2$Se$_3$ family with pure surface-state conduction, we study the effect that the bulk can have on the low-temperature transport properties of gated thin TI films. In particular, we focus on interference corrections, namely weak localization (WL) or weak-antilocalization (WAL), and conductance fluctuations (CFs) based on an effective low-energy Hamiltonian... (read more)

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  • MESOSCALE AND NANOSCALE PHYSICS