Bandgap engineering in an epitaxial two-dimensional honeycomb Si$_{6-x}$Ge$_x$ alloy

11 Mar 2020 Fleurence Antoine Awatani Yuto Huet Camille Wiggers Frank B. Wallace Steaphan M. Yonezawa Takahiro Yamada-Takamura Yukiko

In this Letter, we demonstrate that it is possible to form a two-dimensional (2D) silicene-like Si$_5$Ge compound by replacing the Si atoms occupying on-top sites in the planar-like structure of epitaxial silicene on ZrB$_2$(0001) by deposited Ge atoms. For coverages below 1/6 ML, the Ge deposition gives rise to a Si$_{6-x}$Ge$_{x}$ alloy (with $x$ between 0 and 1) in which the on-top sites are randomly occupied by Si or Ge atoms... (read more)

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