Channel thickness optimization for ultra thin and 2D chemically doped TFETs

30 Apr 2018 Chen Chin-Yi Ameen Tarek A. Ilatikhameneh Hesameddin Rahman Rajib Klimeck Gerhard Appenzeller Joerg

2D material based tunnel FETs are among the most promising candidates for low power electronics applications since they offer ultimate gate control and high current drives that are achievable through small tunneling distances during the device operation. The ideal device is characterized by a minimized tunneling distance... (read more)

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  • COMPUTATIONAL PHYSICS
  • MESOSCALE AND NANOSCALE PHYSICS