Contact gating at GHz frequency in graphene

29 Apr 2018 Wilmart Q. Inhofer A. Boukhicha M. Yang W. Rosticher M. Morfin P. Garroum N. Fève G. Berroir J. -M. Plaçais B.

The paradigm of graphene transistors is based on the gate modulation of the channel carrier density by means of a local channel gate. This standard architecture is subject to the scaling limit of the channel length and further restrictions due to access and contact resistances impeding the device performance... (read more)

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  • MESOSCALE AND NANOSCALE PHYSICS