Experimental Study of Acceptor Removal in UFSD

17 Sep 2020 Jin Y. a Ren H. a Christie S. a Galloway Z. a Gee C. a Labitan C. a Lockerby M. a Martinez-McKinney F. a Mazza S. M. a Padilla R. a Sadrozinski H. F. -W. a Schumm B. a Seiden A. a Wilder M. a Wyatt W. a Zhao Y. a Arcidiacono R. b Cartiglia N. b Ferrero M. c Mandurrino M. b Siviero F. d Sola V. b Tornago M. d Cindro V. e Howard A. e Kramberger G. e Mandić I. e Mikuž M. e

The performance of the Ultra-Fast Silicon Detectors (UFSD) after irradiation with neutrons and protons is compromised by the removal of acceptors in the thin layer below the junction responsible for the gain. This effect is tested both with C-V measurements of the doping concentration and with measurements of charge collection using charged particles... (read more)

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Categories


  • INSTRUMENTATION AND DETECTORS
  • HIGH ENERGY PHYSICS - EXPERIMENT
  • NUCLEAR EXPERIMENT