Integration of external electric fields in molecular dynamics simulation models for resistive switching devices

28 May 2018 Gergs Tobias Dirkmann Sven Mussenbrock Thomas

Resistive switching devices emerged a huge amount of interest as promising candidates for non-volatile memories as well as artificial synapses due to their memristive behavior. The main physical and chemical phenomena which define their functionality are driven by externally applied voltages, and the resulting electric fields... (read more)

PDF Abstract
No code implementations yet. Submit your code now

Categories


  • MATERIALS SCIENCE
  • MESOSCALE AND NANOSCALE PHYSICS
  • COMPUTATIONAL PHYSICS