Spectral broadening of optical transitions at tunneling resonances in InAs/GaAs coupled quantum dot pairs

12 Aug 2020 Kumar P. Jennings C. Scheibner M. Bracker A. S. Carter S. G. Gammon D.

We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling resonances where the coherent tunnel coupling between spatially direct and indirect exciton states is maximized, corresponding to a phonon-assisted transition rate of 150 ns${}^{-1}$ at 20 K. With increasing temperature, the linewidth shows broadening characteristic of single-phonon transitions... (read more)

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